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| Élément Dublin Core | Valeur | Langue |
|---|---|---|
| dc.contributor.author | BOUCHAOUR, M. | - |
| dc.contributor.author | ORSAL, G. | - |
| dc.contributor.author | OULD-ABBAS, A. | - |
| dc.contributor.author | MALOUFI, N. | - |
| dc.contributor.author | GAUTIER, S. | - |
| dc.contributor.author | CHABANE-SARI, N.E. | - |
| dc.contributor.author | OUGAZZADEN, A. | - |
| dc.date.accessioned | 2013-03-03T09:52:46Z | - |
| dc.date.available | 2013-03-03T09:52:46Z | - |
| dc.date.issued | 2012 | - |
| dc.identifier.uri | http://dspace.univ-tlemcen.dz/handle/112/1507 | - |
| dc.description.abstract | III-nitride wide band gap semiconductors ( GaN, AIN, and InN) have recently attracted considerable interest | en_US |
| dc.subject | BGaN | en_US |
| dc.subject | SEM | en_US |
| dc.subject | GaN/ AI2O3 | - |
| dc.subject | AIN/AI2O3 | - |
| dc.subject | AFM | - |
| dc.subject | XRD | - |
| dc.subject | MOVPE | - |
| dc.title | A coparative study between BGaN layers grown on GaN/AI2O3 and AIN/AI2O3 by MOVPE | en_US |
| Collection(s) : | Communications internationales | |
Fichier(s) constituant ce document :
| Fichier | Description | Taille | Format | |
|---|---|---|---|---|
| BOUCHAOUR.pdf | 57,69 kB | Adobe PDF | Voir/Ouvrir |
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