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dc.contributor.authorOuahrani, Tarik-
dc.contributor.authorOtero De La Roza, Alberto-
dc.contributor.authorReshak, AH-
dc.contributor.authorKhenata, R-
dc.contributor.authorFaraoun, HI-
dc.contributor.authorAmrani, B-
dc.contributor.authorMebrouki, M-
dc.contributor.authorLuana, Victor-
dc.date.accessioned2013-06-06T14:16:18Z-
dc.date.available2013-06-06T14:16:18Z-
dc.date.issued2010-09-01-
dc.identifier.issn0921-4526-
dc.identifier.urihttp://dspace.univ-tlemcen.dz/handle/112/1970-
dc.descriptionPhysica B: Condensed Matter, ISSN : 0921-4526, DOI : 10.1016/j.physb.2010.05.061, Issue : 17, Volume : 405, pp. 3658–3664, 1 September 2010.en_US
dc.description.abstractFull-potential linearized augmented plane waves (FPLAPW) calculations have been used to determine the equilibrium properties and elastic constants of the chalcopyrite phase of AgGaSe2. The topological analysis of the electron density shows a clear polar bonding, with the integrated basin charges revealing a clear dominance of the covalent over the ionic character. The bonding analysis also provides a partition of the bulk modulus and compressibility into atomic contributions. Se is seen to dominate the global behavior (B=51.2 GPa), with a local bulk modulus intermediate between the values of the other two atoms: 44.8 (Ga), 51.1 (Se), and 56.6 GPa (Ag).en_US
dc.language.isoenen_US
dc.publisherUniversity of Tlemcenen_US
dc.subjectFPLAPW calculationsen_US
dc.subjectElastic propertiesen_US
dc.subjectQuantum theory of atoms in moleculesen_US
dc.subjectChemical bonding in semiconductorsen_US
dc.titleElastic properties and bonding of the AgGaSe2 chalcopyriteen_US
dc.typeArticleen_US
Collection(s) :Articles internationaux

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