Cellules solaires Tandem à base d’InGaN, pour haut rendement : Modélisation et Simulation Des performances

Abstract

InGaN alloy takes great importance in photovoltaic applications due to its wide bandgap which extends from 0.65 eV (InN gap) to 3.43 eV (GaN gap), allowing the absorption of a large part of the solar spectrum and the fabrication of high-efficiency multi-junction solar cells. In this thesis, we studied a tandem structure of an InGaN-based solar cell by simulation. The structure consists of two pi-n homojunction sub-cells. The objective of the study is to optimize the performances of the cell; for this purpose, we used the Atlas software of SILVACO. We started by varying thickness of layers as well as the doping of the layers. Optimal values are obtained for these two parameters. Then, we studied the effect of temperature on the performance of the structure; we got good results for low temperatures. Finally, to further optimize the performance of the studied tandem cell, we added an antireflection layer to the cell surface. The efficiency achieved by this simulation study is increased from 1.52% for the basic structure to 8.43% after optimization of the tandem solar cell parameters.